to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors KTA1241 transistor (pnp) features z low collector saturation voltage z high power dissipation maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -8 v collector cut-off current i cbo v cb =-35v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-8v,i c =0 -0.1 a h fe(1) v ce =-2v, i c =-0.5a 100 320 dc current gain h fe(2) v ce =-2v, i c =-4a 70 collector-emitter saturation voltage v ce(sat) i c =-3a,i b =-75ma -0.5 v base-emitter voltage v be v ce =-2v, i c =-4a -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 62 pf transition frequency f t v ce =-2v,i c =-0.5a 170 mhz classification of h fe(1) rank o y range 100-200 160-320 symbol parameter value unit v cbo collector-base voltage -35 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -8 v i c collector current -5 a p c collector power dissipation 0.9 w r ja thermal resistance from junction to ambient 139 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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